Patent assignee · US · COMPANY

Spin Transfer Technologies, Inc.

24Patents
24Active
24Granted
54Portfolio score

Filing activity: Jul 25, 2014 → Jan 8, 2018

Most-cited patents

PatentTitleAreaCited byStatus
US9406876B2 Method for manufacturing MTJ memory device Electricity 97 Active
US9263667B1 Method for manufacturing MTJ memory device Electricity 92 Active
US9741926B1 Memory cell having magnetic tunnel junction and thermal stability enhancement layer Electricity 88 Active
US9853206B2 Precessional spin current structure for MRAM Electricity 85 Active
US9337412B2 Magnetic tunnel junction structure for MRAM device Emerging Cross-Sectional Technologies 79 Active
US9773974B2 Polishing stop layer(s) for processing arrays of semiconductor elements Electricity 71 Active
US9728712B2 Spin transfer torque structure for MRAM devices having a spin current injection capping layer Physics 70 Active
US10115446B1 Spin transfer torque MRAM device with error buffer Physics 50 Active
US10163479B2 Method and apparatus for bipolar memory write-verify Physics 47 Active
US10026892B2 Precessional spin current structure for MRAM Electricity 26 Active
US10032978B1 MRAM with reduced stray magnetic fields Electricity 25 Active
US10199083B1 Three-terminal MRAM with ac write-assist for low read disturb Electricity 11 Active
US10186308B1 Magnetic random access memory having improved reliability through thermal cladding Electricity 9 Active
US10192789B1 Methods of fabricating dual threshold voltage devices Electricity 7 Active
US10192984B1 Dual threshold voltage devices with stacked gates Electricity 4 Active
US10186551B1 Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ) Electricity 4 Active
US10192788B1 Methods of fabricating dual threshold voltage devices with stacked gates Electricity 4 Active
US10192787B1 Methods of fabricating contacts for cylindrical devices Electricity 3 Active
US10147872B2 Spin transfer torque structure for MRAM devices having a spin current injection capping layer Physics 3 Active
US10141499B1 Perpendicular magnetic tunnel junction device with offset precessional spin current layer Electricity 2 Active
US10211395B1 Method for combining NVM class and SRAM class MRAM elements on the same chip Electricity 2 Active
US10192602B2 Smart cache design to prevent overflow for a memory device with a dynamic redundancy register Physics 1 Active
US10381553B2 Memory cell having magnetic tunnel junction and thermal stability enhancement layer Electricity 1 Active
US10192601B2 Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers Physics 1 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.