Methods and processes for forming devices from correlated electron material (CEM)
US10141504B2 · kind B2 · utility
4Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jan 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.