Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US10145026B2 · kind B2 · utility
1Cited by
67References
21Claims
0Family size
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Key dates
| Filing date | Jun 3, 2013 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Jan 26, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.