Programming schemes for avoidance or recovery from cross-temperature read failures
US10146460B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Sep 27, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/3058
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values. The storage circuitry is configured to receive data for storage, to measure a temperature at a time of programming the received data, and, to program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise to program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.