Circuits and methods for preventing over-programming of ReRAM-based memory cells
US10147485B2 · kind B2 · utility
2Cited by
101References
8Claims
0Family size
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Key dates
| Filing date | Sep 25, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Sep 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for preventing over-programming of resistive random access (ReRAM) based memory cells in a ReRAM memory array includes applying a programming voltage in a programming circuit path including a ReRAM memory cell to be programmed, sensing programming current drawn by the ReRAM cell while the programming voltage is applied across the memory cell, and decreasing the programming current as a function of a rise in programming current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.