Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component

US10147601B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Philipp Drechsel · Regensburg, DE
• Werner Bergbauer · Windberg, DE
• Juergen Off · Regensburg, DE
• Peter Stauss · Regensburg, DE

Key dates

• Filing date: Apr 13, 2015
• Grant date: Dec 4, 2018
• Expiry date: Jun 2, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02488
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminum and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).