Werner Bergbauer
28Patents
2h-index
24Co-inventors
53Inventor score
Filing activity: Apr 29, 2011 → Jul 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8823034B2 | Optoelectric semiconductor chip | Electricity | 3 | Active |
| US9059353B2 | Optoelectronic component | Electricity | 3 | Active |
| US9806224B2 | Semiconductor layer sequence and method for producing a semiconductor layer sequence | Electricity | 2 | Active |
| US10862003B2 | Component having enhanced efficiency and method for production thereof | Electricity | 2 | Active |
| US10147601B2 | Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component | Electricity | 1 | Active |
| US8884311B2 | Optoelectronic semiconductor chip and method for producing same | Emerging Cross-Sectional Technologies | 1 | Active |
| US9660137B2 | Method for producing a nitride compound semiconductor device | Electricity | 1 | Active |
| US9842964B2 | Method for producing a semiconductor layer sequence | Electricity | 1 | Active |
| US9136431B2 | Optoelectronic semiconductor chip | Electricity | 1 | Active |
| US10950752B2 | Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip | Electricity | 1 | Active |
| US11677045B2 | Optoelectronic semiconductor body and light-emitting diode | Electricity | 0 | Active |
| US10475961B2 | Optoelectronic semiconductor chip | Electricity | 0 | Active |
| US11114584B2 | Optoelectronic component | Electricity | 0 | Active |
| US9685589B2 | Optoelectronic component with a layer structure | Electricity | 0 | Active |
| US10720549B2 | Semiconductor layer sequence having pre- and post-barrier layers and quantum wells | Electricity | 0 | Active |
| US11018277B2 | Semiconductor layer sequence and method for producing a semiconductor layer sequence | Electricity | 0 | Active |
| US9761755B2 | Method of producing a semiconductor layer sequence and an optoelectronic semiconductor component | Electricity | 0 | Active |
| US12021350B2 | Edge-emitting semiconductor laser | Electricity | 0 | Active |
| US9786498B2 | Method for the production of a nitride compound semiconductor layer | Electricity | 0 | Active |
| US11018281B2 | Optoelectronic semiconductor body and light emitting diode | Electricity | 0 | Active |
| US10312401B2 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip | Electricity | 0 | Active |
| US10475959B2 | Method for producing a nitride semiconductor component, and a nitride semiconductor component | Electricity | 0 | Active |
| US9293652B2 | Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip | Electricity | 0 | Active |
| US11616164B2 | Method for producing a nitride compound semiconductor component | Electricity | 0 | Active |
| US11005003B2 | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.