Patent · US Active

Method for preparing a patterned target layer

US10147608B1 · kind B1 · utility

1Cited by

0References

13Claims

0Family size

Assignee

NANYA TECHNOLOGY CORPORATION · TW

Inventors

Shing-Yih Shih · New Taipei, TW
Chih-Wei Cheng · New Taipei, TW
Ming Ko · New Taipei, TW

Key dates

Filing date	Nov 9, 2017
Grant date	Dec 4, 2018
Priority date	—
Expiry date	Nov 9, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0337
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for preparing a patterned target layer is provided. A target layer is formed over a substrate. A multi-layered hard mask layer is formed over the target layer. The multi-layered hard mask layer includes a first hard mask layer over the target layer, a second hard mask layer between the target layer and the first hard mask layer, and a third hard mask layer between the target layer and the second hard mask layer, wherein a material of the second hard mask layer is different from a material of the first hard mask layer and a material of the third hard mask layer. The multi-layered hard mask layer is used as a hard mask layer to prepare a fine pattern on the target layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.