Oxide semiconductor transistor and method of manufacturing the same
US10147614B1 · kind B1 · utility
0Cited by
5References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 8, 2018 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an oxide semiconductor transistor is provided in the present invention, which includes the step of providing an oxide semiconductor transistor on the front side of a substrate, attaching a wafer on the front side of the substrate, forming a contact hole extending from the back side of the substrate to the oxide semiconductor layer of the oxide semiconductor transistor, and filling the contact hole with metal material to form a back gate of the oxide semiconductor transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.