Method for removing back-filled pore-filling agent from a cured porous dielectric
US10147640B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Sep 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. The removal of the pore-filling agent includes heating a substrate holder upon which the substrate rests to a holder temperature greater than 100 degrees C. and less than 400 degrees C., and while heating the substrate holder, exposing the substrate to electromagnetic (EM) radiation, wherein the EM radiation includes emission at a wavelengths within the ultraviolet (UV) spectrum, visible spectrum, infrared (IR) spectrum, or microwave spectrum, or combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.