Semiconductor device structure with gate stack and method for forming the same
US10147649B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 27, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.