Semiconductor devices and a method of detecting a crack
US10147657B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor structure is located below a pad of the semiconductor device. Further, the sensor circuit is configured to detect a value or a change of a value of an electrical parameter associated with the electrical conductive sensor structure indicating a crack within proximity of the pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.