Method of producing III nitride semiconductor light-emitting device
US10147842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Dec 8, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
We propose a method of producing a III nitride semiconductor light-emitting device 1 having a p-type semiconductor layer 150 in this order, wherein the p-type semiconductor layer 150 is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer 51 having an Al content higher than that of the barrier layer 42, on the light emitting layer 40; a nitrogen carrier gas supply step for supplying at least a carrier gas containing nitrogen as a main component to a surface of the electron blocking layer 51; and a second p-type contact formation step for forming a second p-type contact layer 55 made of AlyGa1-yN on the electron blocking layer 51 after the nitrogen carrier gas supply step, and wherein the second p-type contact formation step is performed using a carrier gas containing hydrogen as a main component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.