Spin transfer torque structure for MRAM devices having a spin current injection capping layer
US10147872B2 · kind B2 · utility
3Cited by
139References
23Claims
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Key dates
| Filing date | Jul 24, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Jul 24, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.