Method of forming controllably conductive oxide
US10147877B2 · kind B2 · utility
0Cited by
9References
5Claims
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Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. An oxide layer is provided on the first electrode, the oxide layer comprising an oxygen deficiency and/or defects therein. A second electrode is then provided on the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.