Chakravarthy Gopalan
16Patents
6h-index
23Co-inventors
62Inventor score
Filing activity: Mar 8, 2004 → Sep 7, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7101728B2 | Programmable structure including an oxide electrolyte and method of forming programmable structure | Electricity | 56 | Expired |
| US7402847B2 | Programmable logic circuit and method of using same | Electricity | 56 | Active |
| US8426839B1 | Conducting bridge random access memory (CBRAM) device structures | Electricity | 19 | Active |
| US8941089B2 | Resistive switching devices and methods of formation thereof | Electricity | 13 | Active |
| US8866122B1 | Resistive switching devices having a buffer layer and methods of formation thereof | Electricity | 10 | Active |
| US9401472B1 | Programmable impedance elements and devices that include such elements | Electricity | 6 | Active |
| US8847192B2 | Resistive switching devices having alloyed electrodes and methods of formation thereof | Electricity | 4 | Active |
| US8829482B1 | Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the same | Physics | 3 | Active |
| US9099633B2 | Solid electrolyte memory elements with electrode interface for improved performance | Electricity | 2 | Active |
| US8816314B2 | Contact structure and method for variable impedance memory element | Electricity | 2 | Active |
| US9391270B1 | Memory cells with vertically integrated tunnel access device and programmable impedance element | Electricity | 1 | Active |
| US9306161B1 | Fabrication methods of conducting bridge random access memory (CBRAM) device structures | Electricity | 1 | Active |
| US11056646B2 | Memory device having programmable impedance elements with a common conductor formed below bit lines | Physics | 1 | Active |
| US10147877B2 | Method of forming controllably conductive oxide | Electricity | 0 | Active |
| US9461247B2 | Method of forming controllably conductive oxide | Electricity | 0 | Active |
| US8946020B2 | Method of forming controllably conductive oxide | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.