Plasma etching apparatus
US10153135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.