Semiconductor devices with cavities
US10153167B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 22, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | May 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to the first semiconductor die over the cavity. A first transistor includes a portion of the first transistor formed over the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.