Inventor · Oviedo, FL, US

Patrick M. Shea

22Patents
6h-index
6Co-inventors
62Inventor score

Filing activity: Mar 9, 1989 → Jan 3, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5098640A Apparatus and method for detecting contraband using fast neutron activation Physics 252 Expired
US5078952A Multi-sensor explosive detection system Emerging Cross-Sectional Technologies 49 Expired
US5006299A Explosive detection system Physics 48 Expired
US5114662A Explosive detection system Physics 47 Expired
US5153439A Multi-sensor explosive detection system using an articifical neural system Physics 42 Expired
US8962425B2 Semiconductor device and method of forming junction enhanced trench power MOSFET having gate structure embedded within trench Electricity 6 Active
US9099519B2 Semiconductor device and method of forming junction enhanced trench power MOSFET Electricity 5 Active
US8921186B2 Semiconductor device and method of forming high voltage SOI lateral double diffused MOSFET with shallow trench insulator Electricity 4 Active
US9640638B2 Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON Electricity 3 Active
US8138558B2 Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers Electricity 3 Active
US10529651B2 Co-packaged die on leadframe with common contact Electricity 1 Active
US10164088B2 Trench MOSFET with depleted gate shield and method of manufacture Electricity 1 Active
US10163639B2 Trench MOSFET with depleted gate shield and method of manufacture Electricity 1 Active
US9666703B2 Semiconductor devices with cavities Electricity 1 Active
US9299774B2 Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD Electricity 1 Active
US11004839B1 Trench power MOSFET with integrated-schottky in non-active area Electricity 1 Active
US10825926B2 Trench MOSFET with depleted gate shield and method of manufacture Electricity 0 Active
US10199459B2 Superjunction with surrounding lightly doped drain region Electricity 0 Active
US10832915B2 Trench MOSFET with depleted gate shield and method of manufacture Electricity 0 Active
US10153167B2 Semiconductor devices with cavities Electricity 0 Active
US10741479B2 Co-packaged die on leadframe with common contact Electricity 0 Active
US10707327B2 MOSFET with reduced resistance Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.