Method for producing semiconductor device and semiconductor device
US10153227B2 · kind B2 · utility
2Cited by
0References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 4, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Sep 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a through via extending through the semiconductor substrate from the first surface to the second surface, a metal layer adjacent an inside surface of the through via, and an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.