Semiconductor devices including conductive contacts and insulation patterns arranged in an alternating sequence and methods of fabricating the same
US10153283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Feb 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
Semiconductor devices and method of manufacturing the same are provided. The devices may include a substrate including a first impurity region and second impurity regions spaced apart from the first impurity region and a conductive line. The conductive line may extend in a first direction and may be electrically connected to the first impurity region. The devices may also include first conductive contacts on a side of the conductive line and arranged in the first direction and first insulation patterns on the side of the conductive line and arranged in the first direction. The first conductive contacts may be electrically connected to the second impurity regions. The first conductive contacts and the first insulation patterns may be alternately disposed along the first direction. Top surfaces of the first insulation patterns may be lower than a top surface of the conductive line relative to an upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.