Semiconductor device
US10153350B2 · kind B2 · utility
0Cited by
1References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 3, 2015 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Aug 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
The bottom surface of the trench is provided so that a center part of the bottom surface protrudes upward with respect to a peripheral part of the bottom surface in a short direction. A thickness of the gate insulating film covering the peripheral part is thicker than a thickness of the gate insulating film covering the center part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.