Shinichiro Miyahara
25Patents
4h-index
45Co-inventors
63Inventor score
Filing activity: Dec 11, 1990 → Nov 30, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7060963B2 | Organism information measuring device and organism information measuring method | Human Necessities | 40 | Expired |
| US9136372B2 | Silicon carbide semiconductor device | Electricity | 32 | Active |
| US5187720A | Synchronous serial communication circuit | Electricity | 14 | Expired |
| US8575689B2 | Silicon carbide semiconductor device and manufacturing method of the same | Electricity | 6 | Active |
| US8334541B2 | SiC semiconductor device | Electricity | 4 | Active |
| US8470672B2 | Method of manufacturing silicon carbide semiconductor device | Electricity | 3 | Active |
| US9793376B2 | Silicon carbide semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US8975139B2 | Manufacturing method of silicon carbide semiconductor device | Electricity | 1 | Active |
| US8525223B2 | Silicon carbide semiconductor device | Electricity | 1 | Active |
| US7692591B2 | Portable electronic apparatus | Electricity | 1 | Active |
| US7928830B2 | Biometric information detecting apparatus | Human Necessities | 1 | Active |
| US10784335B2 | Silicon carbide semiconductor device and manufacturing method therefor | Electricity | 0 | Active |
| US8096953B2 | Organism information detecting apparatus | Human Necessities | 0 | Active |
| US5187441A | Portable information apparatus for sensing battery voltage drop | Physics | 0 | Expired |
| US10181517B2 | Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device | Chemistry; Metallurgy | 0 | Active |
| US9698017B2 | Manufacturing method of semiconductor device | Electricity | 0 | Active |
| US9633901B2 | Method for manufacturing semiconductor device | Electricity | 0 | Active |
| US9847414B2 | Semiconductor device and method for manufacturing semiconductor device having a step provided in a lateral surface of a trench formed in a surface of a semiconductor substrate | Electricity | 0 | Active |
| US9941366B2 | Semiconductor device and manufacturing method of semiconductor device | Electricity | 0 | Active |
| US10068972B2 | Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage | Electricity | 0 | Active |
| US9972674B2 | Schottky barrier diode and manufacturing method thereof | Electricity | 0 | Active |
| US10153350B2 | Semiconductor device | Electricity | 0 | Active |
| US12432989B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US9905686B2 | Insulated gate bipolar transistor with improved on/off resistance | Electricity | 0 | Active |
| US9024330B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.