Semiconductor device and a method of making a semiconductor device
US10153365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Aug 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of making a semiconductor device. The device includes a semiconductor substrate having a first conductivity type, a layer of doped silicon located on the substrate, a trench extending into the layer of silicon, and a gate electrode and gate dielectric located in the trench. The device also includes a drain region, a body region having a second conductivity type located adjacent the trench and above the drain region, and a source region having the first conductivity type located adjacent the trench and above the body region. The layer of doped silicon in a region located beneath the body region includes donor ions and acceptor ions forming a net doping concentration within said region by compensation. The net doping concentration of the layer of doped silicon as a function of depth has a minimum in a region located immediately beneath the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.