Philip Rutter
24Patents
10h-index
20Co-inventors
75Inventor score
Filing activity: Feb 10, 1994 → Aug 10, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7446513B2 | Dead time control in a switching circuit | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7205821B2 | Driver for switching circuit and drive method | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7122860B2 | Trench-gate semiconductor devices | Electricity | 23 | Expired |
| US6661208B2 | Synchronous DC-DC regulator with shoot-through prevention | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6603291B2 | Integrated FET and driver for use in a synchronous dc-dc conversion circuit | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5483585A | Apparatus for managing an element manager for a telecommunications switch | Electricity | 20 | Expired |
| US6674268B2 | Swithing regulator utilizing seperate integrated circuits for driving each switch | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7232726B2 | Trench-gate semiconductor device and method of manufacturing | Electricity | 13 | Expired |
| US6919643B2 | Multi-chip module semiconductor devices | Electricity | 12 | Expired |
| US7102337B2 | Feedback circuit for power switching circuit | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6207294A | Self-sharpening, laminated cutting tool and method for making the tool | Emerging Cross-Sectional Technologies | 10 | Expired |
| US9472549B2 | Cascoded semiconductor devices | Electricity | 9 | Active |
| US9268351B2 | Cascode semiconductor device for power factor correction | Electricity | 4 | Active |
| US8357971B2 | Trench gate MOSFET and method of manufacturing the same | Electricity | 3 | Active |
| US9171837B2 | Cascode circuit | Electricity | 3 | Active |
| US9129991B2 | Vertical MOSFET transistor with a vertical capacitor region | Electricity | 2 | Active |
| US6800900B2 | Trench-gate semiconductor devices and their manufacture | Electricity | 1 | Expired |
| US10153365B2 | Semiconductor device and a method of making a semiconductor device | Electricity | 0 | Active |
| US8652904B2 | Semiconductor device with gate trench | Electricity | 0 | Active |
| US9735254B2 | Trench-gate RESURF semiconductor device and manufacturing method | Electricity | 0 | Active |
| US9608514B2 | Diode circuit and power factor correction boost converter using the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US9941265B2 | Circuitry with voltage limiting and capactive enhancement | Electricity | 0 | Active |
| US7122433B2 | Method for manufacturing trench gate semiconductor device | Electricity | 0 | Expired |
| US8513733B2 | Edge termination region of a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.