Image sensors having dark pixels
US10154213B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Nov 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/616
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging sensor may include an array of imaging pixels and at least two rows of dark pixels. Each imaging pixel may include a photodiode that generates charge in response to incident light. Each dark pixel may include a photodiode that is shielded from incident light by shielding material. The at least two rows of dark pixels may be sampled simultaneously and averaged to obtain an average dark pixel charge level. The average dark pixel charge level may be subtracted from each imaging pixel charge level to correct the imaging pixel charge levels for noise. Each column of dark pixels may include a column line that is coupled to first and second readout circuits. Each column line may be coupled to first and second current sources. Each column line may be coupled to at least one capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.