Polishing liquid for CMP, and polishing method
US10155886B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Apr 28, 2014 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Apr 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.