Metal etchant compositions and methods of fabricating a semiconductor device using the same
US10155903B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Mar 21, 2016 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | May 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.