Patent · US Active

Removal composition for selectively removing hard mask and methods thereof

US10155921B2 · kind B2 · utility

3Cited by

4References

20Claims

0Family size

Assignees

E I DU PONT NEMOURS AND COMPANY · US
EKC Technology, Inc. · US

Inventor

Hua Cui · Beijing, CN

Key dates

Filing date	Oct 9, 2014
Grant date	Dec 18, 2018
Priority date	—
Expiry date	Oct 9, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31144
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.