Patent · US Active

Integrated circuit with an amplifier MOSFET

US10156864B2 · kind B2 · utility

0Cited by

7References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Winfried Bakalski · Birkenfeld, DE
Werner Simbuerger · Haar, DE
Anton Steltenpohl · Munich, DE
Hans Taddiken · Munich, DE

Key dates

Filing date	Aug 17, 2017
Grant date	Dec 18, 2018
Priority date	—
Expiry date	Aug 17, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/856
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.