Methods of encapsulation
US10157736B2 · kind B2 · utility
9Cited by
11References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Sep 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.