Method of fabricating a semiconductor device
US10157766B2 · kind B2 · utility
6Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2014 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Mar 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.