Method of forming a device having a doping layer and device formed
US10157780B2 · kind B2 · utility
20Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jan 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device includes forming an opening in a dielectric layer to expose a conductive region in a substrate. The method further includes depositing a conformal layer of dopant material along sidewalls of the opening and along a top surface of the dielectric layer. The method further includes diffusing the dopant from the conformal layer of dopant material into the dielectric layer using an anneal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.