Chii-Ming Wu
105Patents
11h-index
109Co-inventors
83Inventor score
Filing activity: Apr 25, 1997 → Mar 13, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7235482B2 | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology | Electricity | 509 | Expired |
| US6406956B1 | Poly resistor structure for damascene metal gate | Electricity | 62 | Expired |
| US6803309B2 | Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance | Electricity | 27 | Expired |
| US7223673B2 | Method of manufacturing semiconductor device with crack prevention ring | Electricity | 27 | Expired |
| US7396767B2 | Semiconductor structure including silicide regions and method of making same | Electricity | 24 | Expired |
| US5920081A | Structure of a bond pad to prevent testing probe pin contamination | Electricity | 22 | Expired |
| US10157780B2 | Method of forming a device having a doping layer and device formed | Electricity | 20 | Active |
| US8298925B2 | Mechanisms for forming ultra shallow junction | Electricity | 15 | Active |
| US6410424B1 | Process flow to optimize profile of ultra small size photo resist free contact | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7015126B2 | Method of forming silicided gate structure | Electricity | 12 | Expired |
| US8536658B2 | Mechanisms for forming ultra shallow junction | Electricity | 11 | Active |
| US7268065B2 | Methods of manufacturing metal-silicide features | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6884736B2 | Method of forming contact plug on silicide structure | Electricity | 9 | Expired |
| US9997633B2 | Semiconductor devices, FinFET devices and methods of forming the same | Electricity | 8 | Active |
| US8735266B2 | Mechanisms for forming ultra shallow junction | Electricity | 8 | Active |
| US10748798B1 | Wireless camera wafer for vacuum chamber diagnostics | Electricity | 8 | Active |
| US8354734B2 | Semiconductor device with crack prevention ring | Electricity | 7 | Active |
| US7432559B2 | Silicide formation on SiGe | Emerging Cross-Sectional Technologies | 7 | Active |
| US8791528B2 | Methods of manufacturing metal-silicide features | Emerging Cross-Sectional Technologies | 7 | Active |
| US7078810B2 | Semiconductor device and fabrication method thereof | Electricity | 7 | Expired |
| US9653594B2 | Semiconductor device and method for forming the same | Electricity | 6 | Active |
| US8569139B2 | Method of manufacturing strained source/drain structures | Electricity | 5 | Active |
| US6876027B2 | Method of forming a metal-insulator-metal capacitor structure in a copper damascene process sequence | Electricity | 5 | Expired |
| US9620503B1 | Fin field effect transistor and method for fabricating the same | Electricity | 5 | Active |
| US7279755B2 | SRAM cell with improved layout designs | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.