Semiconductor device and method for manufacturing the same
US10157790B1 · kind B1 · utility
14Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a conductive feature, a conductive cap, a dielectric mask, a gate spacer, and a gate stack. The substrate has a source/drain region. The conductive feature is on the source/drain region. The conductive cap is on the conductive feature. The dielectric mask is on the conductive cap and is spaced apart from the conductive feature by the conductive cap. The gate spacer is on the substrate, in which a top surface of the gate spacer is level with a top surface of the mask. The gate stack abuts the gate spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.