Chih-Hao Wang
938Patents
19h-index
198Co-inventors
89Inventor score
Filing activity: Jan 16, 2001 → Jun 24, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9520482B1 | Method of cutting metal gate | Electricity | 2,824 | Active |
| US9608116B2 | FINFETs with wrap-around silicide and method forming the same | Electricity | 1,148 | Active |
| US9818872B2 | Multi-gate device and method of fabrication thereof | Electricity | 150 | Active |
| US9887269B2 | Multi-gate device and method of fabrication thereof | Electricity | 134 | Active |
| US10109721B2 | Horizontal gate-all-around device having wrapped-around source and drain | Electricity | 126 | Active |
| US9881993B2 | Method of forming semiconductor structure with horizontal gate all around structure | Electricity | 124 | Active |
| US10157799B2 | Multi-gate device and method of fabrication thereof | Electricity | 123 | Active |
| US8067280B2 | High performance CMOS devices and methods for making same | Electricity | 96 | Active |
| US8901607B2 | Semiconductor device and fabricating the same | Electricity | 52 | Active |
| US7381619B2 | Dual work-function metal gates | Electricity | 49 | Expired |
| US9006786B2 | Fin structure of semiconductor device | Electricity | 43 | Active |
| US9006842B2 | Tuning strain in semiconductor devices | Electricity | 23 | Active |
| US9614086B1 | Conformal source and drain contacts for multi-gate field effect transistors | Electricity | 22 | Active |
| US9202917B2 | Buried SiGe oxide FinFET scheme for device enhancement | Electricity | 21 | Active |
| US9935199B2 | FinFET with source/drain structure | Electricity | 21 | Active |
| US9318606B2 | FinFET device and method of fabricating same | Electricity | 21 | Active |
| US9991262B1 | Semiconductor device on hybrid substrate and method of manufacturing the same | Electricity | 20 | Active |
| US10211307B2 | Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement | Electricity | 19 | Active |
| US7229893B2 | Method and apparatus for a semiconductor device with a high-k gate dielectric | Electricity | 19 | Expired |
| US9559181B2 | Structure and method for FinFET device with buried sige oxide | Electricity | 15 | Active |
| US7355235B2 | Semiconductor device and method for high-k gate dielectrics | Electricity | 15 | Expired |
| US9257559B2 | Semiconductor device and formation thereof | Electricity | 15 | Active |
| US7332407B2 | Method and apparatus for a semiconductor device with a high-k gate dielectric | Electricity | 14 | Active |
| US7465972B2 | High performance CMOS device design | Electricity | 14 | Expired |
| US10157790B1 | Semiconductor device and method for manufacturing the same | Electricity | 14 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.