Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistance
US10157809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2016 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Nov 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of making the same are disclosed. The device includes a substrate including an AlGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a plurality of electrical contacts located on a major surface of the substrate. The device further includes a plurality of passivation layers located on the major surface of the substrate. The plurality of passivation layers includes a first passivation layer of a first passivation material contacting a first area of the major surface and a second passivation layer of a second passivation material contacting a second area of the major surface. The first and second passivation materials are different passivation materials. The different passivation materials may be compositions of silicon nitride that include different proportions of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.