Die-to-die gap control for semiconductor structure and method
US10157879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2015 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.