Capacitor with improved voltage coefficients

US10157915B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Bhaskar Srinivasan · Boise, US
• Shih Chang Chang · Cupertino, US
• Poornika Fernandes · Sachse, US
• Haowen Bu · Plano, US
• Guru Mathur · Plano, US

Key dates

• Filing date: Oct 25, 2017
• Grant date: Dec 18, 2018
• Expiry date: Oct 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A microelectronic device includes a capacitor having a lower plate of interconnect metal, a capacitor dielectric layer with a lower silicon dioxide layer, a silicon oxy-nitride layer, and an upper silicon dioxide layer, and an upper plate over the upper silicon dioxide layer. The silicon oxy-nitride layer has an average index of refraction of 1.60 to 1.75 at a wavelength of 248 nanometers. To form the microelectronic device, the lower silicon dioxide layer, the silicon oxy-nitride layer, and the upper silicon dioxide layer are formed in sequence over an interconnect metal layer. An upper plate layer is patterned to form the upper plate, leaving the lower silicon dioxide layer and at least half of the silicon oxy-nitride layer over the interconnect metal layer. An interconnect mask is formed of photoresist over the upper plate and the silicon oxy-nitride layer, using the silicon oxy-nitride layer as an anti-reflection layer.