Guru Mathur
28Patents
4h-index
22Co-inventors
59Inventor score
Filing activity: Dec 5, 2003 → Nov 1, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9608105B2 | Semiconductor structure with a doped region between two deep trench isolation structures | Electricity | 6 | Active |
| US9076863B2 | Semiconductor structure with a doped region between two deep trench isolation structures | Electricity | 6 | Active |
| US9786665B1 | Dual deep trenches for high voltage isolation | Electricity | 5 | Active |
| US10177215B1 | Analog capacitor on submicron pitch metal level | Electricity | 4 | Active |
| US9123802B2 | Vertical trench MOSFET device in integrated power technologies | Electricity | 4 | Active |
| US7642546B2 | Molecular memory devices including solid-state dielectric layers and related methods | Emerging Cross-Sectional Technologies | 4 | Active |
| US10937905B2 | Transistor having double isolation with one floating isolation | Electricity | 1 | Active |
| US10157915B1 | Capacitor with improved voltage coefficients | Electricity | 1 | Active |
| US10103258B2 | Laterally diffused metal oxide semiconductor with gate poly contact within source window | Electricity | 1 | Active |
| US10163678B2 | Sinker with a reduced width | Electricity | 0 | Active |
| US10580775B2 | Dual deep trenches for high voltage isolation | Electricity | 0 | Active |
| US9660021B1 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
| US10957774B2 | Laterally diffused metal oxide semiconductor with gate poly contact within source window | Electricity | 0 | Active |
| US10062777B2 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
| US10319809B2 | Structures to avoid floating resurf layer in high voltage lateral devices | Electricity | 0 | Active |
| US9240465B2 | Trench gate trench field plate semi-vertical semi-lateral MOSFET | Electricity | 0 | Active |
| US10608075B2 | Analog capacitor on submicron pitch metal level | Electricity | 0 | Active |
| US9224854B2 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
| US9876071B2 | Structures to avoid floating RESURF layer in high voltage lateral devices | Electricity | 0 | Active |
| US10811530B2 | Trench gate trench field plate vertical mosfet | Electricity | 0 | Active |
| US12034074B2 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
| US9577033B2 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
| US9136368B2 | Trench gate trench field plate semi-vertical semi-lateral MOSFET | Electricity | 0 | Active |
| US11721738B2 | Laterally diffused metal oxide semiconductor with gate poly contact within source window | Electricity | 0 | Active |
| US11189721B2 | Trench gate trench field plate vertical MOSFET | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.