Method for forming CMOS image sensor structure

US10157946B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chien Nan Tu
• Yu-Lung Yeh · Kaohsiung, TW
• Hsing-Chih Lin · Tainan, TW
• Chien-Chang Huang · Tainan, TW
• Shih-Shiung Chen · Baoshan, TW

Key dates

• Filing date: Oct 27, 2017
• Grant date: Dec 18, 2018
• Expiry date: Oct 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8053

Abstract

A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.