Thermal chemical vapor deposition system and operating method thereof
US10161041B2 · kind B2 · utility
3Cited by
0References
18Claims
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Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/458
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.