P-type field-effect transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells, and related memory systems and methods
US10163490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2015 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
P-type Field-effect Transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells (“bit cells”). Related methods and systems are also disclosed. Sense amplifiers are provided in a memory system to sense bit line voltage(s) of the bit cells for reading the data stored in the bit cells. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type Field-effect Transistor (NFET) drive current due for like-dimensioned FETs. In this regard, in one aspect, PFET-based sense amplifiers are provided in a memory system to increase memory read times to the bit cells, and thus improve memory read performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.