Etch method with surface modification treatment for forming semiconductor structure
US10163623B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method with a surface modification treatment for forming a semiconductor structure is provided. The method includes providing a semiconductor substrate, forming a silicon nitride (SiN) layer on the semiconductor substrate, and forming a silicon-containing layer on the semiconductor substrate and beside the SiN layer. The silicon-containing layer includes a silicon dioxide layer, a n-type silicon-containing layer, a p-type silicon-containing layer or a combination thereof. The method further includes performing a surface modification treatment onto the SiN layer and the silicon-containing layer by using a surface modification solution, thereby forming a modified layer on the SiN layer and the silicon-containing layer. The method further includes removing a portion of the modified layer and its underlying SiN layer by a wet etching operation, while the other portion of the modified layer and its underlying silicon-containing layer remain, and removing the other portion of the modified layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.