Symmetric tunnel field effect transistor

US10163716B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mohit Bajaj · Savanuru, IN
• Suresh Gundapaneni · Bengaluru, IN
• Aniruddha Konar · Bengaluru, IN
• Narasimha R. Mavilla · Bengaluru, IN
• Kota V. R. M. Murali · Bengaluru, IN
• Edward J. Nowak · South Burlington, US

Key dates

• Filing date: Oct 25, 2017
• Grant date: Dec 25, 2018
• Expiry date: Oct 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02581
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.