Inventor · Savanuru, IN

Mohit Bajaj

29Patents
5h-index
20Co-inventors
65Inventor score

Filing activity: Apr 8, 2011 → Nov 3, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US9583486B1 Stable work function for narrow-pitch devices Electricity 16 Active
US10170576B2 Stable work function for narrow-pitch devices Electricity 6 Active
US9379253B1 Symmetric tunnel field effect transistor Electricity 5 Active
US9589635B2 Semiconductor device with a stoichiometric gradient Physics 5 Active
US9627484B1 Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer Electricity 5 Active
US9613867B2 Symmetric tunnel field effect transistor Electricity 4 Active
US9419115B2 Junctionless tunnel fet with metal-insulator transition material Electricity 4 Active
US9735250B2 Stable work function for narrow-pitch devices Electricity 3 Active
US10373942B2 Logic layout with reduced area and method of making the same Electricity 3 Active
US9064976B1 Modeling charge distribution on FinFET sidewalls Electricity 2 Active
US8929039B2 Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistor Electricity 2 Active
US9105498B2 Gate strain induced work function engineering Electricity 1 Active
US9876084B2 Symmetric tunnel field effect transistor Electricity 1 Active
US9419016B2 Junctionless tunnel FET with metal-insulator transition material Electricity 1 Active
US9911598B2 Symmetric tunnel field effect transistor Electricity 1 Active
US8450792B2 Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL) Electricity 1 Active
US9647210B2 Tunable voltage margin access diodes Emerging Cross-Sectional Technologies 0 Active
US11387364B2 Transistor with phase transition material region between channel region and each source/drain region Electricity 0 Active
US9972497B2 Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Electricity 0 Active
US10164027B2 Symmetric tunnel field effect transistor Electricity 0 Active
US10319596B2 Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Electricity 0 Active
US10163716B2 Symmetric tunnel field effect transistor Electricity 0 Active
US10347494B2 Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Electricity 0 Active
US10366897B2 Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer Electricity 0 Active
US9508930B2 Tunable voltage margin access diodes Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.