Semiconductor structure and method for manufacturing the same
US10163878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate including a front surface and a back surface; a backside metallization layer formed over the semiconductor substrate, the backside metallization layer being closer to the back surface than to the front surface of the semiconductor substrate, at least a portion of the backside metallization layer forming an inductor structure; and an electrically non-conductive material formed in the semiconductor substrate, the electrically non-conductive material at least partially overlapping the inductor structure from a top view, and the electrically non-conductive material including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate. A method for manufacturing a semiconductor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.