Method of forming absorption enhancement structure for image sensor
US10163974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
In some embodiments, the present disclosure relates to a method of forming an absorption enhancement structure for an integrated chip image sensor that reduces crystalline defects resulting from the formation of the absorption enhancement structure. The method may be performed by forming a patterned masking layer over a first side of a substrate. A dry etching process is performed on the first side of the substrate according to the patterned masking layer to define a plurality of intermediate protrusions arranged along the first side of the substrate within a periodic pattern. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions. One or more absorption enhancement layers are formed over and between the plurality of protrusions. The wet etching process removes a damaged region of the intermediate protrusions that can negatively impact performance of the absorption enhancement structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.