Ching-Chung Su
29Patents
3h-index
46Co-inventors
59Inventor score
Filing activity: Dec 18, 2007 → Jul 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10163974B2 | Method of forming absorption enhancement structure for image sensor | Electricity | 13 | Active |
| US10304898B2 | Absorption enhancement structure for image sensor | Electricity | 9 | Active |
| US9293392B2 | 3DIC interconnect apparatus and method | Electricity | 4 | Active |
| US10847564B1 | Charge release layer to remove charge carriers from dielectric grid structures in image sensors | Electricity | 2 | Active |
| US9991303B2 | Image sensor device structure | Electricity | 1 | Active |
| US9337225B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US9984918B2 | Semiconductor structure and manufacturing method thereof | Electricity | 1 | Active |
| US11430909B2 | BSI chip with backside alignment mark | Electricity | 1 | Active |
| US10784150B2 | Semiconductor structure and manufacturing method thereof | Electricity | 1 | Active |
| US10510799B2 | Absorption enhancement structure for image sensor | Electricity | 1 | Active |
| US12218160B2 | Pixel sensor including a layer stack to reduce and/or block the effects of plasma processing and etching on the pixel sensor | Electricity | 0 | Active |
| US11948962B2 | Charge release layer to remove charge carriers from dielectric grid structures in image sensors | Electricity | 0 | Active |
| US12154939B2 | High capacitance MIM device with self aligned spacer | Electricity | 0 | Active |
| US10840287B2 | 3DIC interconnect apparatus and method | Electricity | 0 | Active |
| US8049213B2 | Feature dimension measurement | Electricity | 0 | Active |
| US12183753B2 | Image sensor and method of making | Electricity | 0 | Active |
| US11769791B2 | High capacitance MIM device with self aligned spacer | Electricity | 0 | Active |
| US12094997B2 | BSI chip with backside alignment mark | Electricity | 0 | Active |
| US10361234B2 | 3DIC interconnect apparatus and method | Electricity | 0 | Active |
| US10804315B2 | Absorption enhancement structure for image sensor | Electricity | 0 | Active |
| US11164903B2 | Image sensor with pad structure | Electricity | 0 | Active |
| US10276427B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US11990488B2 | Grid structure with at least partially angled sidewalls | Electricity | 0 | Active |
| US8987033B2 | Method for forming CMOS image sensors | Electricity | 0 | Active |
| US11380728B2 | Charge release layer to remove charge carriers from dielectric grid structures in image sensors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.