Semiconductor diode and method for forming a semiconductor diode

US10164043B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Philipp Seng · Munich, DE

Key dates

• Filing date: Jan 11, 2012
• Grant date: Dec 25, 2018
• Expiry date: Mar 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor diode is provided. The semiconductor diode includes a monocrystalline silicon semiconductor body including a first semiconductor region of a first conductivity type extending to a first surface of the semiconductor body and having a first maximum doping concentration, and a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region. The semiconductor diode further includes a polycrystalline silicon semiconductor region of the first conductivity type having a second maximum doping concentration which is higher than the first maximum doping concentration and adjoining the first semiconductor region on the first surface, a first metallization arranged on the polycrystalline silicon semiconductor region and in electric contact with the polycrystalline semiconductor region, and an edge-termination structure arranged next to the first semiconductor region. Further, a method for producing a semiconductor diode is provided.